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| PD - 91413E IRLMS5703 HEXFET(R) Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET D 1 6 A D VDSS = -30V D 2 5 D G 3 4 S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. RDS(on) = 0.20 T op V iew M icro 6 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @- 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -2.3 -1.9 -13 1.7 13 20 5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Min. --- Typ. --- Max 75 Units C/W 4/7/04 IRLMS5703 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 --- --- --- -1.0 1.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.01 --- --- --- --- --- --- --- --- 7.2 1.4 2.3 10 12 20 8.4 170 89 44 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.20 VGS = -10V, ID = -1.6A 0.40 VGS = -4.5V, ID = -0.80A --- V VDS = VGS , ID = -250A --- S VDS = -10V, ID = -0.80A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 125C 100 VGS = -20V nA -100 VGS = 20V 11 ID = -1.6A 2.1 nC VDS = -24V 3.4 VGS = -10V, See Fig. 6 and 9 --- VDD = -15V --- ID = -1.6A ns --- RG = 6.2 --- RD = 9.2, See Fig. 10 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 29 27 -1.7 A -13 -1.2 44 41 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.6A, VGS = 0V TJ = 25C, I F = -1.6A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. ISD -1.6A, di/dt -140A/s, VDD V(BR)DSS , TJ 150C IRLMS5703 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP 100 -I D , D ra in -to -S o u rc e C u rre n t (A ) 10 -I D , D ra in -to -S o u rce C u rre n t (A ) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP 10 1 1 -3 .0V -3.0 V 0.1 0.1 1 20 s P U LSE W IDTH TJ = 25 C A 10 0.1 0.1 1 20 s P U LSE W IDTH TJ = 15 0C A 10 -VD S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = -1.6A -I D , D rain -to- S our ce C urr ent ( A ) 1.5 10 TJ = 2 5 C TJ = 1 5 0 C 1.0 1 0.5 0.1 3.0 4.0 5.0 V DS = -1 0 V 2 0 s P U L S E W ID T H 6.0 7.0 8.0 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLMS5703 350 300 -V G S , G a te -to -S o u rce V o lta g e (V ) V GS C is s C rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd 20 I D = -1 .6A V DS = - 24V V DS = - 15V 16 C , C a p a c ita n c e (p F ) 250 C is s 200 12 C o ss 150 8 100 C rss 50 4 0 1 10 100 A 0 0 2 4 6 FOR TE ST C IR C U IT SE E FIG U R E 9 8 10 12 A -VD S , Drain-to-Source V oltage (V) Q G , Total G ate C harge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -IS D , R e ve rse D ra in C u rre n t (A ) OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) 10 -I D , D ra in C u rre n t (A ) 10 100 s TJ = 1 50 C TJ = 25 C 1 1m s 1 10m s 0.1 0.4 0.6 0.8 1.0 VG S = 0 V 1.2 A 0.1 1 T A = 25 C T J = 15 0C S ing le Pulse 10 A 100 1.4 -VS D , S ource-to-Drain V oltage (V ) -V D S , D rain-to-S ource Voltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLMS5703 VDS RD QG -10V QGS VG QGD RG VGS D.U.T. + -10V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 50K 12V .2F .3F VGS 10% + D.U.T. VDS VGS -3mA 90% IG ID VDS Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 100 D = 0.50 Fig 10b. Switching Time Waveforms (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 Thermal Response PDM t1 t2 0.1 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient - VDD IRLMS5703 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS IRLMS5703 Micro6 Package Outline Dimensions are shown in millimeters (inches) 3.00 (.118 ) 2.80 (.111 ) LEAD ASSIGNMENTS -BD D S RECOMMENDED FOOTPRINT 2X 0.95 (.0375 ) 6X (1.06 (.042 ) 1.75 (.068 ) 1.50 (.060 ) -A- 6 1 5 2 4 3.00 (.118 ) 2.60 (.103 ) 3 6 1 5 2 4 3 2.20 (.087 ) 0.95 ( .0375 ) 2X 6X D 0.50 (.019 ) 0.35 (.014 ) D G 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S 0 -10 1.30 (.051 ) 0.90 (.036 ) -C0.15 (.006 ) MAX. 1.45 (.057 ) 0.90 (.036 ) 0.10 (.004 ) 6 SURFACES O O 6X 0.20 (.007 ) 0.09 (.004 ) 0.60 (.023 ) 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). IRLMS5703 Micro6 Part Marking Information Ir)AUuvAhAhxvtAvshvAhyvrAAqrvprAqprqAirsrA!!%! @Y6HQG@)AUCDTADTA6IADSGHT%&! Q6SUAIVH7@S UPQ X6A@SAGPU IVH7@SA8P9@ 7PUUPH Q6SUAIVH7@SA8P9@AS@A@S@I8@) !6A2ADSGHT (! !7A2ADSGHT $" !8A2ADSGHT%&! !9A2ADSGHT$&" !@A2ADSGHT%'! !AA2ADSGHT#$! !BA2ADSGHT!! !CA2ADSGHT%'" 96U@A8P9@A@Y6HQG@T) XXA2A(%"A2A%8 XXA2A(%"!A2AAA 96U@ 8P9@ XXA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S XPSF @6S X X@@F ! 6 !! ! ! 7 !" " " 8 !# # # 9 !$ $ ((% % ((& & ((' ' ((( ( Y !# ! !$ !% a XXA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S XPSF @6S X@@F X ! 6 !& 6 !' !! 7 7 !" 8 !( 8 !# 9 " 9 !$ @ ((% A ((& B ((' C ((( E $ Y ! F $ XA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S @6S ! " # $ % & ' ( XPSF X@@F ! " # X 6 7 8 9 Ir)AUuvAhAhxvtAvshvAhyvrAAqrvprAqprqAhsrA!!%! Q6SUAIVH7@S A2A@6S XA2AX@@F UPQ GPU 8P9@ ! !! !" !# !$ ((% ((& ((' ((( ! Q6SUAIVH7@SA8P9@AS@A@S@I8@) 6A2ADSGHT (! 7A2ADSGHT $" 8A2ADSGHT%&! 9A2ADSGHT$&" @A2ADSGHT%'! AA2ADSGHT#$! BA2ADSGHT!! CA2ADSGHT%'" !# !$ !% Y a XA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S @6S ! !! !" !# !$ ((% ((& ((' ((( ! 6 7 8 9 @ A B C E F XPSF X@@F !& !' !( " X 6 7 8 9 $ $ $! Y a IRLMS5703 Micro6 Tape & Reel Information Dimensions are shown in millimeters (inches) 8mm 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 |
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